| PART |
Description |
Maker |
| FM1808 FM1808-120-P FM1808-120-S FM1808-70-P FM180 |
256Kb Bytewide FRAM Memory(256Kb瀹藉???RAM瀛????
256Kb Bytewide FRAM Memory(256Kb宽字节FRAM存储
4Kb FRAM Serial 3V Memory 4Kb的铁电串V的记
|
ETC[ETC]
List of Unclassifed Manufacturers
Ramtron International Corp.
Electronic Theatre Controls, Inc.
|
| MB85R1002PFTN MB85R1002 |
Memory FRAM SPECIALTY MEMORY CIRCUIT, PDSO48
|
Fujitsu, Ltd.
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| MB85R256 |
Memory FRAM
|
Fuji Electric
|
| MB85R1002 MB85R1002BGT-GE1 MB85R1002PFTN-GE1 MB85R |
Memory FRAM CMOS 1 M Bit (64 K × 16)
Memory FRAM CMOS 1 M Bit (64 K 隆驴 16)
Memory FRAM CMOS 1 M Bit (64 K 】 16)
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| FM24C04A FM24C04A-S |
4KB FRAM SERIAL MEMORY
|
List of Unclassifed Manufacturers
ETC
|
| FM25CL64-S FM25CL64 |
64Kb FRAM Serial 3V Memory
|
Ramtron International Corporation
ETC[ETC]
|
| FM24CL16 FM24CL16-DG FM24CL16-G FM24CL16-S FM24CL1 |
16Kb FRAM Se rial 3V Memory
|
Ramtron International Corporation
|
| FM25256-S FM25256-G |
256Kb FRAM Serial 5V Memory
|
Ramtron International
|
| MB85R256H |
Memory FRAM CMOS 256 K (32 K X 8) Bit
|
Fujitsu Media Devices
|
| MB85R200108 MB85R2001PFTN-GE1 MB85R2001 |
Memory FRAM CMOS 2 M Bit (256 K 隆驴 8)
Memory FRAM CMOS 2 M Bit (256 K 】 8)
Memory FRAM CMOS 2 M Bit (256 K × 8)
|
Fujitsu Component Limit...
Fujitsu Component Limited.
Fujitsu Media Devices Limited
http://
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
